IRFZ34STRLPBF【PDF 1/9 页】MOSFET N-CH 60V 30A D2PAK

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IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

FEATURES

? Halogen-free According to IEC 61249-2-21

V DS (V)

R DS(on) ( ? )

Q g (Max.) (nC)

Q gs (nC)

Q gd (nC)

Configuration

I 2 PAK (TO-262)

V GS = 10 V

D 2 PAK (TO-263)

Single

0.050

Definition

? Advanced Process Technology

? Surface Mount

? Low-Profile Through-Hole (IRFZ34L, SiHFZ34L)

? 175 °C Operating Temperature

? Fast Switching

? Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The D 2 PAKis a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

N-Channel MOSFET

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D 2 PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2 W in a typical surface mount application.

The through-hole version (IRFZ34L, SiHFZ34L) is available

for low-profile applications.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

D 2 PAK (TO-263)

IRFZ34SPbF

SiHFZ34S-E3

D 2 PAK (TO-263)

IRFZ34STRRPbF a

SiHFZ34STRPbF a

D 2 PAK (TO-263)

SiHFZ34STRL-GE3

IRFZ34STRLPbF a

SiHFZ34STLPbF a

I 2 PAK (TO-262)

IRFZ34LPbF

SiHFZ34L-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

V DS

V GS

LIMIT

± 20

UNIT

Continuous Drain Current

Current a, e

Pulsed Drain

V GS at 10 V

T C = 25 °C

T C = 100 °C

I D

I DM

120

Linear Derating Factor

0.59

W/°C

Single Pulse Avalanche Energy b, e

E AS

200

Maximum Power Dissipation

Peak Diode Recovery dV/dt c, e

T C = 25 °C

T A = 25 °C

P D

dV/dt

3.7

4.5

V/ns

Operating Junction and Storage Temperature Range T J , T stg

Soldering Recommendations (Peak Temperature) for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V DD = 25 V, Starting T J = 25 °C, L = 260 μH, R g = 25 ? , I AS = 30 A (see fig. 12).

c. I SD ? 30 A, dI/dt ? 200 A/μs, V DD ? V DS , T J ? 175 °C.

d. 1.6 mm from case.

e. Uses IRFZ34, SiHFZ34 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90368

S11-1045-Rev. C, 30-May-11

- 55 to + 175

300 d

°C

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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